Expérimental
2D materials like graphene, hexagonal Boron Nitride (hBN) and transition metal dichalcogenides (MoS2, WSe2) have unique electronic and optical properties together with flexibility, high-speed operation and standard CMOS fabrication processes compatibility. These make them appealing to embed them in molecular electronic devices. The aim of the internship is to use 2D semiconductors to overcome the issue of gating in vertically stacked molecular junctions. Molecular junctions embedding a 2D semiconductor layer, where transport is governed by three interfaces: metal/2D, 2D/molecules and molecules/metal, will be investigated. Tuning both the carrier density in the 2D semiconductor and the band alignment at interfaces can be achieved by means of metallic gate electrode.