Expérimental
Building on the great success of microelectronics and integrated photonics industries, silicon is undoubtedly one of the most promising platforms for deploying large-scale quantum technologies. To date, silicon-based quantum chips mostly rely on long-lived electrical qubits, which are either weakly coupled to light or emitting in the mid-infrared range unsuitable for optical fiber propagation. Recently, the host group has shown that silicon hosts many fluorescent point defects that can be optically isolated at single scale and offer a single photon emission at telecom wavelengths. This internship, which can be followed by a PhD, aims at tackling the optical properties of these new fluorescent artificial atoms in silicon, in order to assess their potential as sources of indistinguishable single photons at telecom wavelengths. The beginning of the internship will be devoted to building a new confocal microscope setup optimized for single defect spectroscopy at cryogenic temperature. The second task will be to analyze the orbital fine structure of individual defects through resonant excitation using a tunable laser. Finally, the trainee will explore the broadening of the emission lines of single defects, with the aim of quantifying the phenomenon of spectral diffusion for these solid-state emitters and assessing the feasibility of a future single-photon coalescence experiment.