During this internship we will study the molecular beam epitaxial (MBE) growth of the superconducting transition metal dichalcogenide NbSe2. One of the challenges in MBE growth of layered materials is the lack of direct bonding between the substrate and the growing layer. This leads to variablity in the in-plane alignment of the islands that form in the initial stages of growth, resulting in a polycrystalline thin film after island coalescence and a disordered layer stacking in multi-layer films. Here we will use both X-ray diffraction and low-temperature transport measurements to study the effect of different heterostructure designs on the crystalline and superconducting properties of NbSe2 thin films.